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US 2024/0258178 A1Published application
Method of detecting overlay of patterns and method of forming patterns using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMinsu LEE, Minsu KANG, Sangho YUN, Chan HWANG
Life of this patent
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Abstract
A method of detecting overlay of patterns includes forming a lower pattern and an upper pattern on a substrate. A sample pattern is drawn that has a common tangential line with the lower pattern. A position of a real center of gravity of the lower pattern is calculated using the common tangential line.
Claims20
A method of detecting overlay of patterns, the method comprising:
- forming a lower pattern and an upper pattern on a substrate;
- drawing a sample pattern having a common tangential line with the lower pattern;
- and
- calculating a position of a real center of gravity of the lower pattern using the common tangential line.
1 more element
A method of detecting overlay of patterns, the method comprising:
- forming a lower pattern and an upper pattern on a substrate;
- determining whether the lower pattern is within a region where the lower pattern is hidden by the upper pattern;
- drawing a sample pattern having a common contact point with the lower pattern;
- determining a common tangential line of the lower pattern and the sample pattern at the common contact point;
- calculating a position of a real center of gravity of the lower pattern using the common tangential line;
- and
- comparing a position of a center of the upper pattern and the calculated position of the real center of gravity of the lower pattern.
4 more elements
A method of forming patterns, the method comprising:
- forming a first lower pattern and a first upper pattern on a substrate;
- drawing a sample pattern having a common tangential line with the first lower pattern;
- calculating a position of a real center of gravity of the first lower pattern using the common tangential line;
- comparing a position of a center of the first upper pattern and the calculated position of the real center of gravity of the first lower pattern to detect an error of overlay of the first lower pattern and the first upper pattern;
- and
- forming a second lower pattern and a second upper pattern on the substrate by reflecting the error of overlay of the first lower pattern and the first upper pattern.
3 more elements
Dependencies are inferred from the claim text.