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US 2024/0206192 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHung-Chan Lin, Yu-Ping Wang
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Abstract
A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ; forming a passivation layer around the MTJ; forming a second SOT layer on the first SOT layer and the passivation layer, and patterning the second SOT layer and the passivation layer.
Claims9
A method for fabricating a semiconductor device, comprising:
- forming a magnetic tunneling junction (MTJ) on a substrate;
- forming a first spin orbit torque (SOT) layer on the MTJ;
- forming a passivation layer around the MTJ;
- forming a second SOT layer on the first SOT layer and the passivation layer;
- and
- patterning the second SOT layer and the passivation layer.
3 more elements
Dependencies are inferred from the claim text.