An Array Of Capacitors, An Array Of Memory Cells, Method Used In Forming An Array Of Memory Cells, And Method Used In Forming An Array Of Capacitors

A method used in forming an array of memory cells, comprising:

• forming a plurality of vertical transistors in rows along a row direction and in columns along a column direction;
• the vertical transistors individually comprising a top source/drain region, a bottom source/drain region, and a channel region vertically there-between;
• a plurality of gate lines being individually operatively laterally-proximate the channel regions along individual of the rows, a plurality of digitlines being below the gate lines and that are individually directly electrically coupled to the bottom source/drain regions along individual of the columns;
• forming first walls along the column direction and second walls along the row direction, the first and second walls individually comprising a first material directly above a second material, the first and second materials being of different compositions relative one another;
• removing all of the second material from being directly under the first material in the second walls to form beams that are elongated along the row direction and are suspended between immediately-adjacent of the first walls and to leave the second material directly under the first material in the first walls, the beams individually being between immediately-adjacent rows of the top source/drain regions;
• forming third walls along the row direction, the third walls comprising third material that is of different composition from those of the first and second materials, the third material of individual of the third walls circumferentially-covering the beams;
• growing conductive material over the first and second materials selectively relative to the third material;
• the selectively-grown conductive material being vertically along sidewalls of the first walls, directly electrically coupled to the top source/drain regions, and comprising first capacitor electrodes;
• removing the third walls after the selectively growing;
• after removing the third walls, forming a capacitor insulator over the first capacitor electrodes and that circumferentially-covers the beams;
• and
• forming second capacitor electrodes over the capacitor insulator to form a plurality of capacitors that individually comprise one of the first capacitor electrodes, the capacitor insulator, and one of the second capacitor electrodes;
• the second capacitor electrodes being common to multiple of the capacitors.