Memory Circuitry And Method Used In Forming Memory Circuitry

Memory circuitry comprising strings of memory cells, comprising:

• laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier, strings of memory cells comprising channel-material strings that extend through the insulative tiers and the conductive tiers in the memory blocks, the channel-material strings directly electrically coupling to conductor material of the conductor tier;
• and
• intervening material laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks, the intervening material comprising:
• a laterally-outer insulative lining extending through the stack longitudinally-along the immediately-laterally-adjacent memory blocks;
• and
• conducting material longitudinally-along the immediately-laterally-adjacent memory blocks laterally-inward of and directly against the laterally-outer insulative lining, the conducting material being vertically-between at least some immediately-vertically-adjacent of the conductive tiers.

Memory circuitry comprising strings of memory cells, comprising:

• laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier, strings of memory cells comprising channel-material strings that extend through the insulative tiers and the conductive tiers in the memory blocks, the channel-material strings directly electrically coupling to conductor material of the conductor tier, individual of the conductive tiers comprising a control-gate line in individual of the memory blocks, the control-gate line being laterally-recessed inwardly of sidewalls of insulative material of the insulative tiers that are immediately-directly-above and immediately-directly-below the control-gate line and thereby forming lateral recesses relative such sidewalls;
• intervening material laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks, the intervening material comprising:
• a laterally-outer insulative lining extending through the stack longitudinally-along the immediately-laterally-adjacent memory blocks, the laterally-outer insulative lining being within and less-than-filling the lateral recesses;
• and
• conducting material in at least some of the lateral recesses laterally-inward of the laterally-outer insulative lining.