Memory cell with improved insulating structure and method of manufacturing thereof
AssigneeNanya Technology Corporation
InventorCHUNG-LIN HUANG
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Abstract
The present disclosure provides a memory device and a method of manufacturing the same. The memory device includes a substrate, a first gate electrode arranged within the substrate, a second gate electrode arranged within the substrate and over the first gate electrode, and an electrical insulating structure separating the substrate, the first gate electrode and the second gate electrode from one another. The memory device further includes a first dielectric layer arranged within the substrate and covering an upper portion of the electrical insulating structure from a top-view perspective.
Claims15
A method of manufacturing a memory device, comprising:
- providing a substrate including an upper surface;
- performing a first etching operation to form a trench in the substrate;
- depositing a first dielectric layer in the trench;
- forming a first gate electrode in the trench and laterally surrounded by the first dielectric layer;
- depositing a second dielectric layer in the trench over the first gate electrode and on sidewalls of the first dielectric layer;
- performing a second etching operation to remove top portions of the first and second dielectric layers;
- and
- depositing a capping layer to fill the trench.
Dependencies are inferred from the claim text.