Semiconductor device and semiconductor device manufacturing method

A semiconductor device including:

• a substrate having a first main surface and a second main surface;
• a plurality of elements formed on the first main surface of the substrate or above the first main surface;
• at least one first power supply line electrically connected to at least one of the plurality of elements, disposed in a first layer provided below the second main surface of the substrate, and having a lower surface, a first side surface continuously formed from the lower surface, and a second side surface that is opposite to the first side surface and continuously formed from the lower surface;
• and
• at least one second power supply line disposed in the first layer and a second layer below the first layer and disposed from the second layer to the first layer to cover the lower surface, the first side surface, and the second side surface in a part of the at least one first power supply line.

A semiconductor device manufacturing method comprising:

• providing a substrate having a first main surface and a second main surface;
• forming a plurality of elements on the first main surface of the substrate or above the first main surface;
• forming at least one first power supply line electrically connected to at least one of the plurality of elements, disposed in a first layer provided above the first main surface of the substrate, and having a lower surface, a first side surface continuously formed from the lower surface, and a second side surface that is opposite to the first side surface and continuously formed from the lower surface;
• and
• forming at least one second power supply line disposed in a second layer above the first layer and disposed from the second layer to the first layer to cover the lower surface, the first side surface, and the second side surface in a part of the at least two power supply line.