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US 2024/0191101 A1Published application
Silicon carbide (sic) wafer polishing with slurry formulation and process
AssigneeARACA, Inc.
InventorsAra Philipossian, Yasa Sampumo, Jason A. Keleher, Katherine Wortman-Otto, Abigail Linhart, Kiana A. Cahue
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Abstract
A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile. The method provides material removal rates (MRR) that are competitive with, or superior to, conventional methods without utilizing harsh chemicals.
Claims36
A method for polishing a silicon carbide surface, the method comprising:
- exposing a silicon carbide surface to a composition comprising (1) water (2) an oxidizing agent (3) an electrophile and (4) a particulate abrasive;
- and
- polishing the silicon carbide surface while the silicon carbide surface is exposed to the composition.
A method for polishing a silicon carbide surface, the method comprising:
- exposing a silicon carbide surface to a composition comprising (1) water (2) an oxidizing agent (3) a metal ion electrophile with a ligand and (4) a particulate abrasive;
- and
- polishing the silicon carbide surface while the silicon carbide surface is exposed to the composition.
Dependencies are inferred from the claim text.