Methods for Etching Molybdenum
AssigneeTokyo Electron Limited
InventorsYun Han, Peter Lowell George Ventzek, Roberto Longo Pazos, Alok Ranjan
Life of this patent
Estimating the term…
Abstract
A substrate processing method including: providing a substrate containing an etch mask over a metallic molybdenum layer in a recessed feature; exposing the substrate to a plasma-excited deposition gas that forms an etch protection layer on a sidewall of the recessed feature; and exposing the substrate to a plasma-excited etching gas that etches the metallic molybdenum layer according to the etch mask, where the exposing steps are alternatingly performed a plurality of times.
Claims20
A substrate processing method comprising:
- providing a substrate containing an etch mask over a metallic molybdenum layer in a recessed feature;
- exposing the substrate to a plasma-excited deposition gas that forms an etch protection layer on a sidewall of the recessed feature;
- and
- exposing the substrate to a plasma-excited etching gas that etches the metallic molybdenum layer according to the etch mask, wherein the exposing steps are alternatingly performed a plurality of times.
A substrate processing method comprising:
- providing a substrate containing an etch mask over a metallic molybdenum layer in a recessed feature;
- depositing an etch protection layer in the recessed feature, wherein the etch protection layer includes an oxide layer;
- performing a breakthrough etching step that etches through the etch protection layer at a bottom of the recessed feature;
- and
- exposing the substrate to a plasma-excited etching gas that etches the metallic molybdenum layer according to the etch mask.
A substrate processing method comprising:
- providing a substrate containing an etch mask over a metallic molybdenum layer in a recessed feature;
- depositing an etch protection layer on a sidewall of the etch mask, wherein the etch protection layer includes an oxide layer;
- and
- exposing the substrate to a plasma-excited etching gas that etches the metallic molybdenum layer according to the etch mask, wherein the depositing and the exposing are alternatingly performed a plurality of times.
Dependencies are inferred from the claim text.