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US 2024/0006473 A1Published application
Semiconductor device including capacitor structure having lower electrode with different lengths
AssigneeNanya Technology Corporation
InventorWEI-JIE LIN
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Abstract
A semiconductor device includes a substrate, a lower supporting layer, an upper supporting layer, and a lower electrode. The lower supporting layer is disposed on the substrate. The upper supporting layer is disposed on the lower supporting layer. The upper supporting layer defines an opening. The lower electrode is disposed within the opening of the upper supporting layer. The lower electrode has a first portion with a first vertical length and a second portion with a second vertical length different from the first vertical length.
Claims20
A semiconductor device, comprising:
- a substrate;
- a lower supporting layer disposed on the substrate;
- an upper supporting layer disposed on the lower supporting layer, wherein the upper supporting layer defines an opening;
- and
- a lower electrode disposed within the opening of the upper supporting layer, wherein the lower electrode has a first portion with a first vertical length and a second portion with a second vertical length different from the first vertical length.
2 more elements
A semiconductor device, comprising:
- a substrate;
- a lower supporting layer disposed on the substrate;
- an upper supporting layer disposed on the lower supporting layer, wherein the upper supporting layer defines an opening;
- and
- a lower electrode disposed within the opening of the upper supporting layer, wherein the lower electrode has a first upper surface at a first horizontal level and a second upper surface at a second horizontal level different from the first horizontal level.
2 more elements
Dependencies are inferred from the claim text.