Semiconductor device and method for manufacturing semiconductor device
AssigneeKioxia Corporation
InventorsTomotaka ARIGA, Masayuki KITAMURA, Hiroshi TOYODA
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a plurality of insulating layers, a plurality of conductive layers that are formed alternately with the plurality of insulating layers, an interlayer film, and a channel. The interlayer film is different from the conductive layer, has a crystal structure of a hexagonal crystal system, and is formed between at least one of the insulating layers and at least one of the conductive layers. The channel penetrates through the plurality of conductive layers, the interlayer film, and the plurality of insulating layers.
Claims18
A semiconductor device comprising:
- a plurality of insulating layers;
- a plurality of conductive layers that are disposed alternately with the plurality of insulating layers;
- an interlayer film being different from the plurality of conductive layers, the interlayer film having a crystal structure of a hexagonal crystal system, and being disposed between at least one of the insulating layers and at least one of the conductive layers;
- and
- a channel penetrating through the plurality of conductive layers, the interlayer film, and the plurality of insulating layers.
A method for manufacturing a semiconductor device, comprising:
- alternately forming a plurality of sacrificial layers and a plurality of conductive layers;
- forming an interlayer film between at least one of the sacrificial layers and at least one of the conductive layers, the interlayer film having a crystal structure different from crystal structures of the sacrificial layer and the conductive layers;
- forming a channel that penetrates through the plurality of conductive layers, the interlayer film, and the plurality of sacrificial layers;
- removing the plurality of sacrificial layers;
- and
- forming a plurality of insulating layers at regions from which the plurality of sacrificial layers are removed.
A semiconductor device comprising:
- a plurality of insulating layers;
- a plurality of conductive layers that are disposed alternately with the plurality of insulating layers;
- a channel penetrating through the plurality of conductive layers and the plurality of insulating layers;
- and
- a region containing at least one of S, Se, Te, or C, at a boundary area between at least one of the conductive layers and at least one of the insulating layers.
Dependencies are inferred from the claim text.