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US 2023/0413576 A1Published application
Ferroelectric memory device and method for forming the same
AssigneeWuxi Smart Memories Technologies Co., Ltd.
InventorsJianhua Sun, Yushi Hu, Meilan Guo, Zhenyu Lu, Wei Zhang
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Abstract
A memory device includes a plurality of memory cells. Each memory cell includes at least one transistor and at least one capacitor electrically coupled to the at least one transistor. Each capacitor includes a first electrode, a second electrode surrounding at least a first portion of the first electrode, and a ferroelectric layer disposed between the first electrode and the second electrode.
Claims20
A memory device, comprising:
- a plurality of memory cells, each memory cell comprising:
- at least one transistor;
- and
- at least one capacitor electrically coupled to the at least one transistor, comprising:
- a first electrode;
- a second electrode surrounding at least a first portion of the first electrode;
- and
- a ferroelectric layer disposed between the first electrode and the second electrode.
5 more elements
A method for forming a ferroelectric memory cell, comprising:
- forming a stack structure comprising a first conductive layer, a first ferroelectric material layer, and a second conductive layer in an opening formed in a substrate;
- removing a bottom portion of the second conductive layer in the opening to expose a portion of the first ferroelectric material layer;
- conformally forming a second ferroelectric material layer over the second conductive layer and the exposed portion of the first ferroelectric material layer;
- removing a bottom portion of the second ferroelectric material layer and a bottom portion of the first ferroelectric material layer to expose a portion of the first conductive layer;
- and
- conformally forming a third conductive layer over the second ferroelectric material layer and the exposed portion of the first conductive layer, wherein the third conductive layer electrically couples the first conductive layer.
3 more elements
A method for forming a ferroelectric memory cell, comprising:
- forming a first dielectric layer on a substrate;
- forming a second dielectric layer on the first dielectric layer, the first dielectric layer and the second dielectric layer comprising different materials;
- forming an opening in the second dielectric layer and the first dielectric layer;
- conformally forming a first conductive layer in the opening;
- removing the second dielectric layer to expose the first dielectric layer;
- and
- conformally forming a first ferroelectric material layer and a second conductive layer over the first conductive layer and the exposed first dielectric layer,
- wherein the first conductive layer extends substantially vertically above the substrate, and the first ferroelectric material layer and the second conductive layer surround at least a portion of the first conductive layer.
5 more elements
Dependencies are inferred from the claim text.