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US 2023/0413529 A1Published application
Semiconductor device and semiconductor memory device
AssigneeKioxia Corporation
InventorsKasumi YASUDA, Hiroki KAWAI
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Abstract
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a metal oxide semiconductor contacting the first electrode and the second electrode, a gate electrode, and an insulating film disposed between the metal oxide semiconductor and the gate electrode. The metal oxide semiconductor comprises indium, zinc, and niobium.
Claims19
A semiconductor device, comprising:
- a first electrode;
- a second electrode;
- a metal oxide semiconductor contacting the first and second electrodes;
- a gate electrode adjacent to the metal oxide semiconductor;
- and
- an insulating film between the metal oxide semiconductor and the gate electrode, wherein
- the metal oxide semiconductor comprises indium, zinc, and niobium.
4 more elements
Dependencies are inferred from the claim text.