Tft device

A thin film transistor (TFT) device, comprising:

• a substrate;
• a semiconductor channel layer disposed on the substrate, wherein the semiconductor channel layer comprises a channel region, a first doped region, and a second doped region, and the first doped region and the second doped region are disposed on both sides of the channel region;
• an ohmic contact layer disposed on a surface of the semiconductor channel layer away from the substrate, wherein the ohmic contact layer comprises a first pattern attached to the first doped region and a second pattern attached to the second doped region;
• a source-drain layer comprising a source and a drain, wherein the source is disposed on a surface of the first pattern away from the substrate, and the drain is disposed on a surface of the second pattern away from the substrate;
• and
• a compensation pattern disposed on the surface of the semiconductor channel layer away from the substrate in the channel region, wherein the compensation pattern and the semiconductor channel layer are different types of semiconductors, and the compensation pattern is a same type of semiconductor as the first pattern and the second pattern.