Method of manufacturing semiconductor structure

Abstract

The present disclosure provides a method of manufacturing a semiconductor structure. A first patterned layer and a second patterned layer are formed over a substrate. The second patterned layer and the first patterned layer are alternately arranged. An etching is performed, thereby forming an arched surface of the first patterned layer and an arched surface of the second patterned layer. A sacrificial layer is formed over the first patterned layer and the second patterned layer, wherein a plurality of air gaps are defined by the substrate, the first patterned layer, the second patterned layer and the sacrificial layer. The sacrificial layer above the plurality of air gaps is removed, and a planar top surface of the first patterned layer and a planar top surface of the second patterned are thereby formed. The substrate is then patterned using the first patterned layer and the second patterned layer as a mask.

Dependencies are inferred from the claim text.