Static random access memory array pattern
AssigneeUnited Microelectronics Corp.
InventorsChun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang, Li-Ping Huang, Chun-Yen Tseng
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AssigneeUnited Microelectronics Corp.
InventorsChun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang, Li-Ping Huang, Chun-Yen Tseng
Estimating the term…
The invention provides a static random access memory (SRAM) array pattern, which comprises a substrate, a first region, a second region, a third region and a fourth region are defined on the substrate and arranged in an array, each region partially overlaps with the other three regions, and each region contains a SRAM cell, the layout of the SRAM cell in the first region is the same as that in the third region, the layout of the SRAM cell in the second region is the same as that in the fourth region, and the layout of the SRAM cell in the first region and the layout of the SRAM cell in the fourth region are mirror patterns along a horizontal axis.
A static random access memory (SRAM) array pattern, comprising:
Dependencies are inferred from the claim text.