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US 2023/0402290 A1Published application
Atomic layer etching of metal oxides using novel co-reactants as halogenating agents for semiconductor fabrication
AssigneesMerck Patent GmbH, North Carolina State University
InventorsRavindra KANJOLIA, Jacob WOODRUFF, Mansour MOINPOUR, Charles DEZELAH, Wenyi XIE, Holger SAARE, Gregory PARSONS
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Abstract
The disclosed and claimed subject matter relates to thermal ALE processing of metal oxide films using one or more fluorinating agent and one or more chlorinating agent.
Claims34
A thermal ALE process performed in a reactor for selectively etching a metal oxide comprising:
- (i) a fluorination comprising exposing a surface of the metal oxide to one or more fluorinating agent to produce a fluorinated surface;
- (ii) a first purge;
- (iii) a ligand-exchange comprising exposing the fluorinated surface to one or more chlorinating agent to produce a volatile chlorinated species;
- and
- (iv) a second purge.
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Dependencies are inferred from the claim text.