Photomask design correction method

Abstract

A photomask design correction method is provided. The photomask design correction method includes the following steps. A layer information data is provided. An OPC process is performed on the layer information data to obtain a first photomask data. A photomask is fabricated based on the first photomask data. A pattern information data of the photomask is obtained after the photomask is fabricated. The difference between the pattern information data and a database of the OPC process is analyzed. An OPC model of the OPC process is corrected based on the difference to obtain a corrected OPC model. The OPC process is performed using the corrected OPC model on the layer information data to obtain a second photomask data.

Dependencies are inferred from the claim text.