Extreme ultraviolet (euv) photomask

An extreme ultraviolet (EUV) photomask comprising:

• a mask structure including a main region, a scribe lane region surrounding the main region, a plurality of buffer regions outside the scribe lane region and apart from each other, and a black border region outside the plurality of buffer regions,
• the plurality of buffer regions including a first buffer region, a second buffer region, a third buffer region, and a fourth buffer region,
• a first width of the first buffer region, a first width of the second buffer region, a first width of the third buffer region, and a first width of the fourth buffer region being equal to each other,
• the scribe lane region including a marker region at one corner thereof,
• the marker region including a marker pattern region, a marker blocking region surrounding a portion of the marker pattern region, and a marker variable region surrounding a remaining portion of the marker pattern region,
• the first buffer region contacting a first side of the scribe lane region and extending therealong,
• the second buffer region contacting a second side of the scribe lane region and extending therealong,
• the third buffer region contacting a third side of the scribe lane region and extending therealong, and the third buffer region contacting the marker region,
• the fourth buffer region contacting a fourth side of the scribe lane region and extending therealong, and the fourth buffer region contacting the marker region,
• the black border region including a first corner region, a second corner region, and a third corner region,
• the first corner region contacting the first buffer region and the second buffer region,
• the second corner region contacting the first buffer region and the third buffer region, and
• the third corner region contacting the second buffer region and the fourth buffer region.

An extreme ultraviolet (EUV) photomask comprising:

• a mask structure including a main region, a scribe lane region surrounding the main region and having a rectangular shape, a plurality of buffer regions outside the scribe lane region and apart from each other, and a black border region outside the plurality of buffer regions,
• the plurality of buffer regions including a first buffer region, a second buffer region, a third buffer region, and a fourth buffer region,
• a first width of the first buffer region, a first width of the second buffer region, a first width of the third buffer region, and a first width of the fourth buffer region being equal to each other,
• the scribe lane region including a first marker region, a second marker region, a third marker region, and a fourth marker region, respectively located at corners of the scribe lane region,
• the first marker region, the second marker region, the third marker region, and the fourth marker regions each including a marker pattern region and a marker blocking region surrounding a portion of the marker pattern region,
• the first buffer region contacting a first side of the scribe lane region and extending therealong,
• the second buffer region contacting a second side of the scribe lane region and extending therealong,
• the third buffer region contacting a third side of the scribe lane region and extending therealong,
• the fourth buffer region contacting a fourth side of the scribe lane region and extending therealong,
• the black border region including a first corner region, a second corner region, a third corner region, and a fourth corner region,
• the first corner region contacting the first buffer region, the second buffer region, and the first marker region,
• the second corner region contacting the first buffer region, the third buffer region, and the second marker region,
• the third corner region contacting the second buffer region, the fourth buffer region, and the third marker region, and
• the fourth corner region contacting the third buffer region, the fourth buffer region, and the fourth marker region.