Method for fabricating semiconductor structure, semiconductor structure, and memory

A method for fabricating a semiconductor structure, comprising

• providing a substrate, a thin-film stack structure being formed on the substrate;
• forming a first groove and a second groove in the thin-film stack structure, and forming write transistors in the first groove, the second groove extending along a first direction, and the second groove being positioned between adjacent two of the write transistors in a second direction;
• removing a part of the thin-film stack structure by etching using the second groove to form a first hole and a second hole respectively, forming a write word line in the first hole, and forming a write bit line in the second hole;
• forming a first via on an upper surface of the thin-film stack structure, the write transistor being exposed to a bottom of the first via, and forming a storage node in the first via;
• forming a read transistor over the thin-film stack structure;
• and
• forming a read bit line and a lead over the read transistor to obtain the semiconductor structure.