Semiconductor substrate having an alignment structure

A method of manufacturing a semiconductor substrate, the method comprising:

• providing a semiconductor base substrate;
• forming an alignment structure on a surface of the semiconductor base substrate by forming a groove pattern in an area of the surface of the semiconductor base substrate, wherein grooves of the groove pattern are aligned with a specific crystallographic direction of the semiconductor base substrate, wherein the specific crystallographic direction provides for a slower epitaxial growth on the area of the surface of the semiconductor base substrate formed as the groove pattern compared to epitaxial growth on a surface of the semiconductor base substrate adjacent to the area of the surface formed as the groove pattern;
• and
• depositing an epitaxial layer on the surface of the semiconductor base substrate formed as the groove pattern.