Capacitor device with multi-layer dielectric structure

A semiconductor device structure, comprising:

• an insulating layer formed over a semiconductor substrate;
• and
• a capacitor device embedded in the insulating layer, comprising:
• a first metal electrode layer;
• a second metal electrode layer formed over the first metal electrode layer;
• and
• a plurality of first capacitor dielectric layers alternatingly stacked with a plurality of second capacitor dielectric layers, wherein the plurality of first capacitor dielectric layers and the plurality of second capacitor dielectric layers are formed between the first metal electrode layer and the second metal electrode layer, and wherein the first capacitor dielectric layer is made of HfO2, and the second capacitor dielectric layer is made of ZrO2.

A semiconductor device structure, comprising:

• a conductive feature formed over a semiconductor substrate;
• and
• a metal-insulator-metal (MIM) capacitor device formed over and electrically connected to the conductive feature,
• wherein the MIM capacitor has a bottom electrode layer and a top electrode layer that are separated by a superlattice multi-layer structure comprising a plurality of first dielectric layers and a plurality of second dielectric layers that are in an alternate arrangement, and
• wherein the second dielectric layer has a different lattice constant and a different thickness than the first dielectric layer.