Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device includes: irradiating, with laser light, a semiconductor substrate having a p-type first semiconductor layer and an n-type second semiconductor layer so that the laser light converges on an interface between the first semiconductor layer and the second semiconductor layer, wherein each of the p-type first semiconductor layer and the n-type second semiconductor layer placed on the first semiconductor layer is formed of a compound semiconductor; and separating the semiconductor substrate into the first semiconductor layer and the second semiconductor layer along the interface.

Dependencies are inferred from the claim text.