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US 2023/0094719 A1Published application
Random weight initialization of non-volatile memory array
AssigneeInternational Business Machines Corporation
InventorsCheng Chi, Takashi Ando, Reinaldo Vega, Praneet Adusumilli
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Abstract
A memory device is provided. The memory device includes a main feature disposed beneath a surface of a photolithographic mask. The memory device further includes at least one Sub-Resolution Assistant Feature (SRAF) proximate to the main feature beneath the surface. The main feature has an electrical conductivity based on an area relationship with the at least one SRAF.
Claims20
A memory device, comprising:
- a main feature disposed beneath a surface of a photolithographic mask;
- and
- at least one Sub-Resolution Assistant Feature (SRAF) proximate to the main feature beneath the surface, the main feature having an electrical conductivity based on an area relationship with the at least one SRAF.
A method for forming a memory device, comprising:
- forming a main feature disposed beneath a surface of a photolithographic mask;
- and
- forming at least one Sub-Resolution Assistant Feature (SRAF) proximate to the main feature beneath the surface, the main feature having an electrical conductivity which sets a weight initialization value for the main feature based on an area relationship with the at least one SRAF.
A memory device, comprising:
- a plurality of main features disposed beneath a surface of a photolithographic mask;
- and
- at least one respective Sub-Resolution Assistant Feature (SRAF) proximate to each of the plurality of main features beneath the surface, each of the plurality of main features having an electrical conductivity based on an area relationship with the at least one SRAF proximate thereto.
Dependencies are inferred from the claim text.