Semiconductor structure and manufacturing method thereof
AssigneesChangxin Memory Technologies, Inc., Beijing Superstring Academy of Memory Technology
InventorsXiaoguang WANG, Dinggui ZENG, Huihui LI, Kanyu CAO
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Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a plurality of memory cells alternately arranged on a substrate, the memory cell including an odd number of vertical transistors, a connection pad connected to one end of each of the odd number of vertical transistors, and a magnetic tunnel junction located on the connection pad; wherein a material of a channel of the vertical transistor includes a monocrystalline semiconductor.
Claims15
A semiconductor structure, comprising:
- a plurality of memory cells alternately arranged on a substrate, the memory cell comprising an odd number of vertical transistors, a connection pad connected to one end of each of the odd number of vertical transistors, and a magnetic tunnel junction located on the connection pad;
- wherein
- a material of a channel of the vertical transistor comprises a monocrystalline semiconductor.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate, and forming a plurality of vertical transistors on the substrate;
- wherein a material of a channel of the vertical transistor comprises a monocrystalline semiconductor;
- forming a plurality of connection pads on a side of the plurality of vertical transistors away from the substrate, so that a projection of the connection pad on the substrate overlaps projections of an odd number of the vertical transistors on the substrate;
- and
- forming a magnetic tunnel junction on one side of each of the connection pads away from the vertical transistor.
Dependencies are inferred from the claim text.