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US 2023/0056747 A1Published application
Methods for manufacturing semiconductor structures and semiconductor structures
AssigneeChangxin Memory Technologies, Inc.
InventorYuan LI
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Abstract
An embodiment of the present application relates to the technical field of semiconductors, and discloses a method for manufacturing a semiconductor structure. In this embodiment, the method comprises: providing an insulating substrate (101); depositing an isolation layer (103) on the insulating substrate (101) by a physical vapor deposition process, the isolation layer (103) comprising cobalt atoms and barrier atoms located at grain boundaries of the cobalt atoms; and depositing a copper-containing metal layer (104) on the isolation layer (103).
Claims11
A method for manufacturing a semiconductor structure, comprising:
- providing an insulating substrate;
- depositing an isolation layer on the insulating substrate by a physical vapor deposition process, the isolation layer comprising cobalt atoms and barrier atoms located at grain boundaries of the cobalt atoms;
- and
- depositing a copper-containing metal layer on the isolation layer.
1 more element
Dependencies are inferred from the claim text.