On-chip emf isolation of an integrated circuit coupled with photoconductive semiconductor switch under an on-chip faraday cage

A laterally integrated circuit with EMF shielding comprising:

• a substrate having an upper surface;
• a gallium nitride layer disposed on said upper surface of the substrate;
• a photoconductive semiconductor switch laterally disposed alongside a transistor on said gallium nitride layer integrated into the integrated circuit structure;
• an EMF shield comprising a container having walls forming an interior and an exterior opposite said interior;
• said container enclosing said substrate, said gallium nitride layer and said photoconductive semiconductor switch laterally disposed alongside the transistor on said gallium nitride layer integrated into the integrated circuit structure;
• a signal line electronically coupled with said photoconductive semiconductor switch, said signal line penetrating said wall of the EMF shield container;
• a light source optically coupled to said photoconductive semiconductor switch;
• and
• a transitory portion formed in said wall, said transitory portion configured to pass emissions from the light source through said EMF shield to said photoconductive semiconductor switch.

A process of protecting a laterally integrated circuit from EMF comprising:

• enclosing the laterally integrated circuit with an EMF shield;
• said laterally integrated circuit comprising:
• a substrate having an upper surface;
• a semiconductor layer disposed on said upper surface of the substrate;
• a photoconductive semiconductor switch laterally disposed alongside a transistor on said semiconductor layer integrated into the integrated circuit structure;
• said EMF shield comprising:
• a container having walls forming an interior and an exterior opposite said interior;
• said container enclosing said substrate, said semiconductor layer and said photoconductive semiconductor switch laterally disposed alongside the transistor on said semiconductor layer integrated into the integrated circuit structure, a transitory portion formed in said wall, said transitory portion configured to pass emissions from a light source through said wall to said photoconductive semiconductor switch;
• coupling a signal line with said photoconductive semiconductor switch, said signal line penetrating said wall of the EMF shield container;
• and
• optically coupling the light source to said photoconductive semiconductor switch.