Methods for processing semiconductor structures and methods for forming semiconductor structures

A method for processing a semiconductor structure, comprising:

• providing a semiconductor substrate, the semiconductor substrate being provided with feature portions, an aspect ratio of the feature portions being greater than a preset aspect ratio, mask layers being provided on a top of feature portions;
• ashing a semiconductor structure, the semiconductor structure comprising the semiconductor substrate, the feature portions, and the mask layers;
• cleaning the semiconductor structure;
• drying the semiconductor structure;
• and
• removing the mask layers;
• wherein, during the drying process, one mask layer in at least a set of adjacent mask layers is tilted toward the adjacent mask layer, and after the drying process, the distance between the tilted mask layer and the adjacent mask layer is less than the distance between the two before the drying process.