Semiconductor storage device and method for manufacturing the same

A semiconductor storage device, comprising:

• a first stacked body in which a first insulating film and a first conductive film are alternately stacked in a first direction;
• a first columnar body including:
• (i) a first semiconductor portion extending in the first stacked body in the first direction, and (ii) a charge trapping film disposed on an outer peripheral surface of the first semiconductor portion;
• a second columnar body including:
• (i) a second semiconductor portion of the first columnar body disposed in a second direction intersecting the first direction and extending in the first stacked body in the first direction, and (ii) a charge trapping film disposed on an outer peripheral surface of the second semiconductor portion;
• and
• a first select gate portion disposed above the first stacked body, wherein
• the first select gate portion includes:
• a second stacked body provided above the first stacked body, in which the second insulating film and the second conductive film are alternately stacked in the first direction,
• a third columnar body including:
• (i) a third semiconductor portion provided on each of the first columnar body and the second columnar body, the third semiconductor portion extending in the second stacked body in the first direction, and (ii) a first gate insulating film disposed on an outer peripheral surface of the third semiconductor portion, and
• a first division insulating film electrically dividing the third semiconductor portion of each of a pair of the third columnar bodies, configured with the two adjacent third columnar bodies, and the second conductive film, and
• each of the pair of third columnar bodies has a shape of both end portions of a substantially oblate shape, a substantially elliptical shape, or a substantially rectangular shape divided by the first division insulating film in a plan view as seen from the first direction.