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US 2022/0285390 A1Published application
Semiconductor memory device
AssigneeSK hynix Inc.
InventorsJae Hyun HAN, Won Tae KOO
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Abstract
A semiconductor memory device includes a tunnel insulating layer, a data storage layer, and a blocking insulating layer that are sequentially disposed. The tunnel insulating layer includes Metal Organic Frameworks (MOF) having a lower dielectric constant than a dielectric constant of the blocking insulating layer.
Claims13
A semiconductor memory device, comprising:
- a stacked body including interlayer insulating layers and word lines that are alternately stacked;
- a channel layer passing through the stacked body;
- a blocking insulating layer between each of the word lines and the channel layer;
- a data storage layer between the blocking insulating layer and the channel layer;
- and
- a tunnel insulating layer between the channel layer and the data storage layer,
- wherein the tunnel insulating layer includes Metal Organic Frameworks (MOF) having a lower dielectric constant than a dielectric constant of the blocking insulating layer.
4 more elements
A semiconductor memory device, comprising:
- a gate electrode over a semiconductor substrate;
- a blocking insulating layer between the semiconductor substrate and the gate electrode;
- a data storage layer between the semiconductor substrate and the blocking insulating layer;
- and
- a tunnel insulating layer between the semiconductor substrate and the data storage layer,
- wherein the tunnel insulating layer includes Metal Organic Frameworks (MOF) having a lower dielectric constant than a dielectric constant of the blocking insulating layer.
3 more elements
Dependencies are inferred from the claim text.