Techniques for void-free material depositions

A method of forming a memory device, comprising:

• providing a substrate comprising a plurality of fins, the plurality of fins including a first sidewall opposite a second sidewall, and a bottom trench surface extending between the first and second sidewalls;
• providing a seed layer over the substrate including along the first sidewall, the second sidewall, and the bottom trench surface;
• removing the seed layer from the first sidewall and the second sidewall using an angled ion etch oriented at a non-zero angle of inclination relative to a perpendicular extending from the bottom trench surface, wherein the seed layer remains only along the bottom trench surface following the angled ion etch;
• and
• forming a metal fill material over the substrate.

A method of forming a semiconductor device, comprising:

• providing a plurality of device structures extending from a substrate, the plurality of device structures defining a plurality of trenches each including a first sidewall opposite a second sidewall, and a bottom trench surface extending between the first and second sidewalls;
• providing a seed layer over each of the plurality of device structures including along the first and second sidewalls and along the bottom trench surface;
• removing the seed layer from the first sidewall and the second sidewall of each of the plurality of device structures using an angled ion etch oriented at a non-zero angle of inclination relative to a perpendicular extending from the bottom trench surface of the base layer, wherein the seed layer remains along the bottom trench surface of the substrate;
• and
• depositing a metal fill material within the plurality of trenches.