Multi-finger gate nonvolatile memory cell

A nonvolatile memory device comprising:

• a floating gate having a first finger and a second finger, wherein the first floating gate finger has a width that is shorter than or equal to a width of the second floating gate finger;
• spacer structures adjacent to sidewalls of the floating gate;
• an active region below the floating gate fingers;
• a first doped region in the active region laterally displaced from the first floating gate finger on a first side;
• a second doped region in the active region laterally displaced from the first floating gate finger on a second side;
• and
• a third doped region in the active region laterally displaced from the second floating gate finger and the second doped region.

A method of fabricating a nonvolatile memory device comprising:

• providing an active region;
• providing a floating gate having a first finger and a second finger above the active region;
• forming a first doped region in the active region laterally displaced from the first floating gate finger on a first side;
• forming a second doped region in the active region laterally displaced from the first floating gate finger on a second side;
• and
• forming a third doped region in the active region laterally displaced from the second floating gate finger and the second doped region.