Integrated circuit including bipolar transistors

A method, comprising:

• forming a first row of transistors arranged along a first direction, the first row of transistors including:
• a first conduction region having a first dopant type;
• a common base on the first conduction region, the common base having a second dopant type opposite the first dopant type;
• a plurality of second conduction regions on the common base, the plurality of second conduction regions having the first dopant type, each of the transistors of the first row including a respective second conduction region;
• and
• a first insulating trench extending along the first direction and in contact with each transistor of the first row of transistors;
• forming a conductive layer on the first insulating trench and the common base, the conductive layer having a first portion extending along the first direction and a plurality of second portions extending from the first portion along a second direction that is transverse to the first direction, each of the plurality of second portions of the conductive layer extending between adjacent ones of the second conduction regions;
• and
• forming a spacer layer between the conductive layer and the second conduction regions.

A method, comprising:

• forming a plurality of bipolar transistors arranged along a first direction, the forming the plurality of bipolar transistors including:
• forming a plurality of first conduction regions having a first conductivity type;
• forming a second conduction region having the first conductivity type;
• and
• forming a common base between the first conduction regions and the second conduction region, the common base having a second conductivity type that is different from the first conductivity type, the second conduction region and the common base extending continuously under each of the first conduction regions;
• forming an insulating trench in contact with each of the plurality of bipolar transistors;
• forming a conductive layer having a comb shape with a first portion extending along the first direction on the insulating trench and a plurality of second portions extending between adjacent ones of the first conduction regions along a second direction that is transverse to the first direction;
• and
• forming a spacer layer between the conductive layer and the first conduction regions.