Composition and method for polishing and integrated circuit

A polishing method, comprising:

• providing an integrated circuit comprising a first conductive layer and a dielectric layer disposed over the first conductive layer, wherein the dielectric layer includes a hole partially exposing the first conductive layer;
• forming a second conductive layer over the dielectric layer and in the hole of the dielectric layer to form a conductive plug, wherein a gap exists between a sidewall of the conductive plug and the dielectric layer;
• polishing the second conductive layer with a slurry composition to expose the gap, wherein the slurry composition comprises at least one cationic surfactant having at least one nitrogen atom in the molecule, and a slurry comprising at least one liquid carrier, at least one abrasive and at least one pH adjusting agent;
• and
• filling the gap with the slurry composition to block the first conductive layer by the cationic surfactant.

An integrated circuit, comprising:

• a first conductive layer over a substrate;
• a dielectric layer over the first conductive layer;
• a second conductive layer in the dielectric layer and electrically connected to the first conductive layer;
• and
• a block layer between a sidewall of the second conducive layer and the dielectric layer, wherein the block layer comprises at least one cationic surfactant having at least one nitrogen atom in the molecule.