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US 2022/0013536 A1Published application
Three-dimensional memory devices with channel structures having plum blossom shape
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsWanbo Geng, Lei Xue, Xiaoxin Liu, Tingting Gao, Weihua Cheng
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Abstract
Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate and a channel structure extending vertically above the substrate and having a plum blossom shape including a plurality of petals in a plan view. The channel structure includes a plurality of semiconductor channels in the plurality of petals, respectively.
Claims20
A three-dimensional (3D) memory device, comprising:
- a substrate;
- and
- a channel structure extending vertically above the substrate and having a plum blossom shape comprising a plurality of petals in a plan view,
- wherein the channel structure comprises a plurality of semiconductor channels in the plurality of petals, respectively.
1 more element
A three-dimensional (3D) memory device, comprising:
- a continuous blocking layer, a continuous charge trapping layer, and a continuous tunneling layer each following a plum blossom shape from outside to inside in this order in a plan view;
- and
- a plurality of separate semiconductor channels each disposed over part of the continuous tunneling layer at a respective apex of the plum blossom shape.
A three-dimensional (3D) memory device, comprising:
- a substrate;
- and
- a channel structure extending vertically above the substrate and comprising more than two memory cells in a same plane in a plan view,
- wherein each of the memory cells comprises a separate semiconductor channel, and the memory cells share a continuous blocking layer, a continuous charge trapping layer, and a continuous tunneling layer from outside to inside in this order in the plan view.
1 more element
Dependencies are inferred from the claim text.