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US 2022/0011663 A1Published application
Extreme ultraviolet mask absorber materials
AssigneeApplied Materials, Inc.
InventorsShuwei Liu, Shiyu Liu, Vibhu Jindal
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Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.
Claims20
A method of manufacturing an extreme ultraviolet (EUV) mask blank comprising:
- forming on a substrate a multilayer stack which reflects EUV radiation, the multilayer stack comprising a plurality of reflective layer pairs;
- and
- forming an absorber layer on the multilayer stack, the absorber layer selected from an alloy of tantalum and iridium;
- and an alloy of ruthenium and antimony.
1 more element
An extreme ultraviolet (EUV) mask blank comprising:
- a substrate;
- a multilayer stack which reflects EUV radiation, the multilayer stack comprising a plurality of reflective layer pairs;
- and
- an absorber layer on the multilayer stack selected from an alloy of tantalum and iridium;
- and an alloy of ruthenium and antimony.
2 more elements
An extreme ultraviolet (EUV) mask blank comprising:
- a substrate;
- a multilayer stack which reflects EUV radiation, the multilayer stack comprising a plurality of reflective layer pairs including molybdenum (Mo) and silicon (Si);
- and
- an absorber layer on the multilayer stack selected from an alloy of tantalum and iridium and an alloy of ruthenium and antimony.
1 more element
Dependencies are inferred from the claim text.