Group vi precursor compounds
AssigneeEntegris, Inc.
InventorsDavid M. ERMERT, Thomas H. BAUM
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Abstract
The invention provides a facile process for preparing various Group VI precursor compounds, set forth below as Formula (I), useful in the vapor deposition of certain Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. Also provided is a process for the preparation of such precursor compounds. Additionally, the invention provides a method for vapor deposition of Group VI metals onto microelectronic device substrates utilizing the precursor compounds of the invention.
Claims14
A compound of the Formula (I)
- wherein M is chosen from molybdenum, chromium, and tungsten, X is chosen from fluoro, chloro, bromo, and iodo, and each L1 and L2 are the same or different and are chosen from C1-C6 alkyl carbonates and C1-C6 alkyl oxalates.
A process for preparing a compound of Formula (I):
- wherein M is chosen from molybdenum, chromium, and tungsten, X is chosen from fluoro, chloro, bromo, and iodo, and each L1 and L2 are the same or different and are chosen from C1-C6 alkyl carbonates and C1-C6 alkyl oxalates, which comprises contacting a compound of the Formula
- wherein M is chosen from molybdenum, chromium, and tungsten, X is chosen from fluoro, chloro, bromo, and iodo, with a compound of the formula L1 and/or L2, wherein L1 and L2 are the same or different and are chosen from C1-C6 alkyl carbonates and C1-C6 alkyl oxalates.
A process for forming a molybdenum, chromium, or tungsten-containing material on a substrate, comprising contacting the substrate with a compound of Formula (I)
- wherein M is chosen from molybdenum, chromium, and tungsten, X is chosen from fluoro, chloro, bromo, and iodo, and each L1 and L2 are the same or different are and chosen from C1-C6 alkyl carbonates and C1-C6 alkyl oxalates, and depositing the molybdenum, chromium, or tungsten-containing material onto the substrate, under vapor deposition conditions.
A process for forming a Group VI metal-containing material on a substrate in a reaction zone, said reaction zone existing within a vapor deposition system having different regions, comprising
- (i) reacting in a first region, a compound of the formula MO2X2, wherein M is chosen from molybdenum, chromium, and tungsten, and wherein X is chosen from fluoro, chloro, bromo, and iodo, with a with a compound of the formula L1 and/or L2, wherein L1 and L2 are the same or different and are chosen from C1-C6 alkyl carbonates and C1-C6 alkyl oxalates, to provide a compound of Formula (I):
- (ii) transporting the compound of Formula (I) to a second region in the vapor deposition delivery and re-fill system;
- (iii) followed by removal of L1 and L2 by application of sufficient heat and/or vacuum to volatilize any solvent present to form a compound of the Formula MO2X2;
- followed by
- (iv) contacting the substrate with a compound of the formula MO2X2 in a reaction zone, and depositing Group VI metal-containing material onto the substrate, under vapor deposition conditions.
Dependencies are inferred from the claim text.