METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-ACCESS MEMORY (FeRAM)

An integrated circuit, comprising:

• a semiconductor substrate;
• an interconnect structure disposed over an upper surface of the semiconductor substrate, the interconnect structure comprising:
• a bottommost metal layer, an inter-metal layer disposed over the bottommost metal layer, and top metal layer disposed over the inter-metal layer, and a bond pad layer disposed over the top metal layer, wherein the top metal layer has a width and a thickness that are greater than a width and a thickness, respectively, of the inter-metal layer;
• and
• a ferroelectric capacitor structure disposed within the interconnect structure, the ferroelectric capacitor structure comprising:
• a bottom electrode disposed over the top metal layer, a ferroelectric structure over the bottom electrode, and a top electrode disposed over the ferroelectric structure and under the bond pad layer.

An integrated circuit, comprising:

• a semiconductor substrate;
• an interconnect structure disposed over an upper surface of the semiconductor substrate, the interconnect structure comprising:
• a bottommost metal layer, a plurality of inter-metal layers disposed at different heights over the bottommost metal layer, and a plurality of top metal layers disposed at different heights over the inter-metal layers, and a bond pad layer disposed over the plurality of top metal layers;
• wherein each of the plurality of top metal layers has a width and a thickness that is greater than a width and a thickness, respectively, of each of the plurality of inter-metal layers;
• and
• a ferroelectric capacitor structure disposed within the interconnect structure, the ferroelectric capacitor structure comprising:
• a bottom electrode structure disposed over an uppermost inter-metal layer of the plurality of inter-metal layers, a ferroelectric structure over the bottom electrode structure, and a top electrode structure disposed under a lowermost top metal layer of the plurality of top metal layers.