Method for evaluating hot carrier injection effect of device

Abstract

A method for evaluating a Hot Carrier Injection (HCI) effect of a device is provided. The method includes, a ratio of a substrate current to a drain current of a first device at different gate-source voltages is acquired, and recorded as a first current ratio; a ratio of a substrate current to a drain current of a second device at different gate-source voltages is acquired, and recorded as a second current ratio, the second device is subjected to process parameter adjustment or device parameter adjustment relative to the first device; and an influence of the process parameter adjustment or the device parameter adjustment on an HCI effect of the device is determined based on the second current ratio and the first current ratio.

Dependencies are inferred from the claim text.