Creating an implanted layer in a silicon-on-insulator (soi) wafer through crystal orientation channeling

Abstract

Utilizing crystal orientation channeling through the semiconductor lattice structure of a silicon-on-insulator (SOI) wafer to create a thermally stable implanted amorphous layer beneath a buried oxide (BOX) layer in the SOI wafer is described. Utilizing channeling in this manner may involve tilting and/or twisting the SOI wafer to align axes of the crystal orientation channels with projections vectors from an implanter. One example method of fabricating a semiconductor device generally includes orienting an SOI substrate, the SOI substrate having a BOX layer and a device layer disposed above the BOX layer, such that directions of projection vectors from an implanter are substantially aligned with longitudinal axes of crystal orientation channels in a lattice structure of a semiconductor material of the device layer; and projecting, with the implanter, ions or particles into the crystal orientation channels of the oriented SOI substrate to create an implanted layer below the BOX layer.

Dependencies are inferred from the claim text.