Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorsKi Hong LEE, Hwal Pyo KIM, Seung Woo HAN
Life of this patent
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Abstract
A semiconductor device includes: a stack structure including insulating layers and conductive layers, which are alternately stacked; a channel structure penetrating the stack structure; data storage patterns respectively interposed between the conductive layers and the channel structure; blocking patterns respectively interposed between the conductive layers and the data storage patterns; insulating patterns respectively interposed between the insulating layers and the channel structure; and insulative liners interposed between the insulating layers and the insulating patterns, the insulative liners respectively surrounding the insulating patterns.
Claims17
A semiconductor device comprising:
- a stack structure including insulating layers and conductive layers, which are alternately stacked;
- a channel structure penetrating the stack structure;
- data storage patterns respectively interposed between the conductive layers and the channel structure;
- blocking patterns respectively interposed between the conductive layers and the data storage patterns;
- insulating patterns respectively interposed between the insulating layers and the channel structure;
- and
- insulative liners interposed between the insulating layers and the insulating patterns, the insulative liners respectively surrounding the insulating patterns.
A semiconductor device comprising:
- a stack structure including insulating layers and conductive layers, which are alternately stacked;
- a channel structure penetrating the stack structure;
- insulating patterns respectively interposed between the insulating layers and the channel structure, the insulating patterns protruding farther toward the channel structure than the conductive layers;
- data storage patterns respectively interposed between the conductive layers and the channel structure, the data storage patterns protruding farther toward the channel structure than the insulating patterns;
- and
- blocking patterns respectively interposed between the conductive layers and the data storage patterns.
Dependencies are inferred from the claim text.