Metal wiring film and method of fabricating thereof, thin film transistor
AssigneeWuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorToru KIMURA
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Abstract
A metal wiring film, a method for fabricating the same, and a thin film transistor. The metal wiring film includes: a first film layer formed by a nickel-copper alloy, a mass percentage of nickel in the nickel-copper alloy ranges from 30% to 70%; a second film layer disposed above the first film layer, a material forming the second film layer is an aluminum-neodymium alloy, and the mass percentage of neodymium in the aluminum-neodymium alloy ranges from 1% to 5%; a third film layer disposed above the second film layer, a material forming the third film layer is the same as the material forming the first film layer.
Claims15
A metal wiring film, wherein the metal wiring film comprises:
- a first film layer formed by a nickel-copper alloy, a mass percentage of nickel in the nickel-copper alloy ranges from 30% to 70%;
- a second film layer disposed above the first film layer, a material forming the second film layer is an aluminum-neodymium alloy, and the mass percentage of neodymium in the aluminum-neodymium alloy ranges from 1% to 5%;
- a third film layer disposed above the second film layer, a material forming the third film layer is same as the material forming the first film layer.
A thin film translator comprising a metal wiring film, wherein the metal wiring film comprises:
- a first film layer formed by a nickel-copper alloy, a mass percentage of nickel in the nickel-copper alloy ranges from 30% to 70%;
- a second film layer disposed above the first film layer, a material forming the second film layer is an aluminum-neodymium alloy, and the mass percentage of neodymium in the aluminum-neodymium alloy ranges from 1% to 5%;
- a third film layer disposed above the second film layer, a material forming the third film layer is the same as the material forming the first film layer.
A method of fabricating a metal wiring film in a thin film transistor, wherein the method comprises the following steps:
- providing a substrate, the substrate comprising an active region and an insulating layer covering the active region;
- forming a transparent conductive film on the insulating layer;
- forming a first film layer covering the transparent conductive film, the material of the first film layer is a nickel-copper alloy, and a mass percentage of nickel in the nickel-copper alloy is between 30% and 70%;
- forming a second film layer above the first film layer, the material of the second film layer is an aluminum-neodymium alloy, and a mass percentage of neodymium in the aluminum-neodymium alloy is between 1% and 5%;
- forming a third film layer over the second film layer, the material of the third film layer is same as the material of the first film layer.
Dependencies are inferred from the claim text.