Semiconductor device and method for forming the same

A semiconductor device, comprising:

• a substrate;
• a semiconductor fin extending upwardly from the substrate;
• a gate structure extending across the semiconductor fin;
• a source structure on the semiconductor fin;
• a drain structure on the semiconductor fin, wherein the source and drain structures are respectively on opposite sides of the gate structure in a plan view;
• a source contact landing on the source structure;
• and
• a metal line having a length extending along a lengthwise direction of the semiconductor fin and overlapping the semiconductor fin, wherein the source contact having a length extends past opposite longitudinal sides of the metal line along a lengthwise direction of the gate structure in the plan view.

A method of forming a semiconductor device, comprising:

• forming a semiconductor fin extending upwardly from a substrate;
• forming a gate structure extending across the semiconductor fin;
• forming a source structure and a drain structure on the semiconductor fin and on opposite sides of the gate structure in a plan view;
• forming a source contact landing on the source structure and a drain contact landing on the drain structure;
• forming a source via landing on the source contact and a drain via landing on the drain contact;
• and
• after forming the source and drain vias, forming a metal line in contact with the drain via, wherein the source contact has a length extending past a longitudinal side of the metal line.