Thin film transistor and method for manufacturing the same

Abstract

The present disclosure relates to a TFT and a method for manufacturing the TFT. The method includes forming an active layer; forming a gate electrode insulating layer on the active layer; forming a gate electrode on the gate electrode insulating layer; forming an interlayer insulating layer on the gate electrode to cover the gate electrode and the active layer, so that an interface between the interlayer insulating layer and the active layer possesses a donor-like defect state; forming a via hole in the interlayer insulating layer so that the active layer is exposed; and forming a source electrode and a drain electrode on the interlayer insulating layer, so that the source electrode and the drain electrode are electrically coupled to the active layer through the via hole, respectively.

Dependencies are inferred from the claim text.