SiC SUBSTRATE AND SiC SINGLE CRYSTAL MANUFACTURING METHOD
AssigneeShowa Denko K.K.
InventorAkihiro MATSUSE
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Abstract
A SiC substrate contains tantalum or niobium of which the content is equal to or more than 3×1014 cm−3 and equal to or less than 1×1015 cm−3, and nitrogen of which the content is equal to or more than 1×1016 cm −3 and equal to or less than 1×1020 cm−3.
Claims15
A SiC substrate comprising:
- tantalum or niobium of which a content is equal to or more than 3×1014 cm−3 and equal to or less than 1×1015 cm−3;
- and
- nitrogen of which a content is equal to or more than 1×1016 cm−3 and equal to or less than 1×1020 cm−3.
A SiC single crystal manufacturing method using a sublimation method in which a single crystal is grown by recrystallizing a gas sublimated from a raw material on a surface of a seed crystal, wherein
- the raw material contains tantalum or niobium.
A SiC single crystal manufacturing method using a sublimation method in which a single crystal is grown by recrystallizing a gas sublimated from a raw material on a surface of a seed crystal, wherein
- the raw material is sublimated on the environment in which powder or plate-like tantalum or niobium is positioned between the raw material and the seed crystal.
Dependencies are inferred from the claim text.