Nonvolatile memory device

A nonvolatile memory device comprising:

• a plurality of wiring line pairs each including a pair of first and second wiring lines extending in a first direction;
• a plurality of third wiring lines each extending in a second direction intersecting the first direction;
• and
• a plurality of memory cells provided between the wiring line pairs and the third wiring lines,
• each of the memory cells comprising:
• a resistance change memory element connected to a corresponding third wiring line, and
• a switching element structure including a first switching element portion provided between the resistance change memory element and the first wiring line included in a corresponding wiring line pair, and a second switching element portion provided between the resistance change memory element and the second wiring line included in the corresponding wiring line pair.