Semiconductor storage device

A semiconductor storage device, comprising:

• a single-crystal semiconductor substrate;
• an interlayer insulating layer provided over the semiconductor substrate;
• a wiring layer including a single-crystal layer provided over the interlayer insulating layer;
• an under layer provided over the interlayer insulating layer;
• a stacked body, provided over the under layer, that includes at least one conductive layer and at least one insulating layer alternately stacked on top of one another;
• a single-crystal semiconductor layer extending in a first direction perpendicular to the semiconductor substrate, penetrating the stacked body, and including a first end in contact with the wiring layer;
• and
• a memory film provided between the conductive layer and the semiconductor layer, wherein
• a crystal orientation of the semiconductor layer and a crystal orientation of the single-crystal layer are the same.