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US 2021/0066448 A1Published application
Ferroelectric Tunnel Junction With Internal Gate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChih-Sheng Chang
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Abstract
A device includes a bottom electrode that includes a first electrically conducive material; a dielectric layer over the bottom electrode; an internal metal layer over the dielectric layer; a ferroelectric layer over the internal metal layer; and a top electrode over the ferroelectric layer, the top electrode including a second electrically conductive material, an area of the top electrode being smaller than an area of the internal metal layer.
Claims20
A device comprising:
- a bottom electrode comprising a first electrically conducive material;
- a dielectric layer over the bottom electrode;
- an internal metal layer over the dielectric layer;
- a ferroelectric layer over the internal metal layer;
- and
- a top electrode over the ferroelectric layer, the top electrode comprising a second electrically conductive material, an area of the top electrode being smaller than an area of the internal metal layer.
3 more elements
A device comprising:
- a substrate;
- and
- a ferroelectric tunnel junction (FTJ) over the substrate, the FTJ comprising:
- a bottom electrode;
- a top electrode over the bottom electrode;
- a ferroelectric film between the bottom electrode and the top electrode, wherein the ferroelectric film and the top electrode have a same first surface area;
- an internal metal layer between the ferroelectric film and the bottom electrode;
- and
- a dielectric layer between the internal metal layer and the bottom electrode, wherein the dielectric layer and the internal metal layer have a same second surface area, wherein the same first surface area is smaller than the same second surface area.
6 more elements
A method comprising:
- forming a bottom electrode over a substrate;
- forming a dielectric layer and an internal metal layer successively over the bottom electrode;
- patterning the dielectric layer and the internal metal layer using a first mask such that a remaining portion of the dielectric layer and a remaining portion of the internal metal layer have a same first surface area;
- forming a ferroelectric layer and a top metal layer successively over the remaining portion of the dielectric layer and the remaining portion of the internal metal layer;
- and
- patterning the ferroelectric layer and the top metal layer using a second mask such that a remaining portion of the ferroelectric layer and a remaining portion of the top metal layer have a same second surface area, wherein the same second surface area is smaller than the same first surface area.
3 more elements
Dependencies are inferred from the claim text.