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US 2020/0402794 A1Published application
Silicon doping for laser splash blockage
AssigneeMicron Technology, Inc.
InventorAngelo Oria Espina
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Abstract
Semiconductor devices having silicon doping for laser splash protection, along with associated methods and systems, are disclosed herein. In one embodiment, a semiconductor device includes a silicon layer and a circuitry layer with a plurality of semiconductor devices. A doped silicon region is formed on a front side of the silicon layer upon which the circuitry layer is deposited. The doped silicon region is positioned under the circuitry layer. The doped silicon region has a dopant concentration of at least 1015 cm−3.
Claims18
A semiconductor device, comprising:
- a silicon layer;
- a circuitry layer including a plurality of semiconductor devices;
- and
- a doped silicon region formed on a front side of the silicon layer upon which the circuitry layer is deposited, the doped silicon region positioned under the circuitry layer;
- wherein the doped silicon region has a dopant concentration of at least 1015 cm−3.
2 more elements
A semiconductor device, comprising:
- a silicon substrate;
- an active layer of circuitry over the silicon substrate;
- and
- a doped silicon region at a front side of the silicon substrate and adjacent an outer edge of the semiconductor device, wherein the doped silicon region has a dopant concentration of at least 1015 cm−3.
1 more element
Dependencies are inferred from the claim text.