Forming iii nitride alloys

A method for forming a wurtzite III-nitride layer having an effective piezoelectric coefficient within a desired effective piezoelectric coefficient range, the method comprising:

• determining an effective piezoelectric coefficient for the wurtzite III-nitride layer based on a composition of the wurtzite III-nitride layer;
• determining whether the determined effective piezoelectric coefficient is within the desired effective piezoelectric coefficient range;
• adjusting, responsive to the determination that the determined effective piezoelectric coefficient is not within the desired effective piezoelectric coefficient range, the composition of the wurtzite III-nitride layer, wherein an amount of boron, gallium, or indium is increased in the adjusted composition of the wurtzite III-nitride layer when the determined effective piezoelectric coefficient is greater than the desired effective piezoelectric coefficient range, and wherein an amount of aluminum is increased in the adjusted composition of the wurtzite III-nitride layer when the determined effective piezoelectric coefficient is less than the desired effective piezoelectric coefficient range;
• and
• forming the wurtzite III-nitride layer using the adjusted composition of the wurtzite III-nitride layer.

A method for forming a semiconductor device, the method comprising:

• selecting a substrate on which a wurtzite III-nitride alloy layer will be formed;
• selecting a piezoelectric polarization for the wurtzite III-nitride alloy;
• selecting a wurtzite III-nitride alloy composition for the wurtzite III-nitride alloy layer;
• determining whether there is a strain value for the selected wurtzite III-nitride alloy composition satisfying the selected piezoelectric polarization;
• and
• forming, responsive to the determination that there is a strain value for the selected wurtzite III-nitride alloy composition satisfying the selected piezoelectric polarization, the wurtzite III-nitride alloy layer having the selected wurtzite III-nitride alloy composition on the selected substrate so that the formed wurtzite III-nitride alloy layer exhibits the strain value.