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US 2020/0350256 A1Published application
Wiring structure and electronic device employing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChangseok Lee, Hyeonjin Shin, Seongjun Park, Donghyun Im, Hyun Park, Keunwook Shin, Jongmyeong Lee, Hanjin Lim
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Abstract
Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.
Claims36
A wiring structure comprising:
- a first conductive material layer, the first conductive material layer being non-porous;
- a nanocrystalline graphene layer on a substantial entirety of the first conductive material layer;
- and
- a seed layer on the first conductive material layer,
- wherein the nanocrystalline graphene layer is directly grown on the seed layer, and
- wherein the nanocrystalline graphene layer has a ratio of 2D/G of a Raman spectrum which is equal to or greater than 0.05, and a ratio of D/G that is equal to or less than 2.
3 more elements
A wiring structure comprising:
- a conductive material layer;
- a nanocrystalline graphene layer on the conductive material layer in contact with the conductive material;
- and
- a seed layer on the conductive material layer, wherein the nanocrystalline graphene layer is directly grown on the seed layer, and
- a graphene layer formed on the nanocrystalline graphene layer,
- wherein the nanocrystalline graphene layer has a ratio of 2D/G of a Raman spectrum which is equal to or greater than 0.05, and a ratio of D/G that is equal to or less than 2.
3 more elements
Dependencies are inferred from the claim text.